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NBB-302
CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz
RoHS Compliant & Pb-Free Product Package Style: MPGA, Bowtie, 3x3, Ceramic
Features
Reliable, Low-Cost HBT Design 12.0dB Gain, +13.7dBm P1dB@2GHz High P1dB of +14.0dBm@6.0GHz and +11.0dBm@14.0GHz Single Power Supply Operation 50 I/O Matched for High Freq. Use
Pin 1 Indicator RF OUT 8 Ground 7 6 5 9 4 RF IN
1
2
3 Ground
Applications
Narrow and Broadband Commercial and Military Radio Designs Linear and Saturated Amplifiers Gain Stage or Driver Amplifiers for MWRadio/Optical Designs (PTP/PMP/ LMDS/UNII/VSAT/WLAN/Cellular/DWDM) Functional Block Diagram
Product Description
The NBB-302 cascadable broadband InGaP/GaAs MMIC amplifier is a low-cost, high-performance solution for general purpose RF and microwave amplification needs. This 50 gain block is based on a reliable HBT proprietary MMIC design, providing unsurpassed performance for small-signal applications. Designed with an external bias resistor, the NBB-302 provides flexibility and stability. The NBB-302 is packaged in a low-cost, surface-mount ceramic package, providing ease of assembly for high-volume tape-and-reel requirements. It is available in either packaged or chip (NBB-300-D) form, where its gold metallization is ideal for hybrid circuit designs.
Ordering Information
NBB-302 NBB-302-T1 NBB-302-E NBB-X-K1 Cascadable Broadband GaAs MMIC Amplifier DC to 12GHz Tape & Reel, 1000 Pieces Fully Assembled Evaluation Board Extended Frequency InGaP Amp Designer's Tool Kit
Optimum Technology Matching(R) Applied
GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT
RF MICRO DEVICES(R), RFMD(R), Optimum Technology Matching(R), Enabling Wireless ConnectivityTM, PowerStar(R), POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. (c)2006, RF Micro Devices, Inc.
Rev A6 DS060124
7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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NBB-302
Absolute Maximum Ratings Parameter
RF Input Power Power Dissipation Device Current Channel Temperature Operating Temperature Storage Temperature
Rating
+20 300 70 200 -45 to +85 -65 to +150
Unit
dBm mW mA C C C
The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice.
Caution! ESD sensitive device.
Exceeding any one or a combination of these limits may cause permanent damage.
Parameter
Overall
Small Signal Power Gain, S21
Min.
12.0 11.0 9.0
Specification Typ.
13.5 13.0 12.5 10.5 9.5 (avg.) 0.6 2.4:1 2.0:1 2.8:1
Max.
Unit
dB dB dB dB dB dB
Condition
VD =+3.9V, ICC =50mA, Z0 =50, TA =+25C f=0.1GHz to 1.0GHz f=1.0GHz to 4.0GHz f=4.0GHz to 6.0GHz f=6.0GHz to 12.0GHz f=12.0GHz to 14.0GHz f=0.1GHz to 8.0GHz f=0.1GHz to 4.0GHz f=4.0GHz to 12.0GHz f=12.0GHz to 15.0GHz
Gain Flatness, GF Input and Output VSWR
Bandwidth, BW Output Power @ -1dB Compression, P1dB
12.5 13.7 14.8 11.0
GHz dBm dBm dBm dB dBm dB 4.2 V dB/C
BW3 (3dB) f=2.0GHz f=6.0GHz f=14.0GHz f=3.0GHz f=2.0GHz f=0.1GHz to 12.0GHz
Noise Figure, NF Third Order Intercept, IP3 Reverse Isolation, S12 Device Voltage, VD Gain Temperature Coefficient, GT/T 3.6
5.5 +23.5 -15 3.9 -0.0015
MTTF versus Temperature @ ICC =50mA
Case Temperature Junction Temperature MTTF 85 122.9 >1,000,000 194 C C hours C/W
Thermal Resistance
JC
J T - T CASE -------------------------- = JC ( C Watt ) V D I CC
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7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A6 DS060124
NBB-302
Pin 1 2 3 4 Function GND GND GND RF IN Description
Ground connection. For best performance, keep traces physically short and connect immediately to ground plane. Same as pin 1. Same as pin 1. RF input pin. This pin is NOT internally DC blocked. A DC blocking capacitor, suitable for the frequency of operation, should be used in most applications. DC coupling of the input is not allowed, because this will override the internal feedback loop and cause temperature instability. Same as pin 1. Same as pin 1. Same as pin 1. RF output and bias pin. Biasing is accomplished with an external series resistor and choke inductor to VCC. The resistor is selected to set the DC current into this pin to a desired level. The resistor value is determined by the following equation:
Interface Schematic
5 6 7 8
GND GND GND RF OUT
RF OUT
( V CC - V DEVICE ) R = -----------------------------------------I CC
Care should also be taken in the resistor selection to ensure that the current into the part never exceeds maximum datasheet operating current over the planned operating temperature. This means that a resistor between the supply and this pin is always required, even if a supply near 5.0V is available, to provide DC feedback to prevent thermal runaway. Alternatively, a constant current supply circuit may be implemented. Because DC is present on this pin, a DC blocking capacitor, suitable for the frequency of operation, should be used in most applications. The supply side of the bias network should also be well bypassed. Same as pin 1.
RF IN
9
GND
Package Drawing
2.94 min 3.28 max Pin 1 Indicator 1.00 min 1.50 max 0.025 min 0.125 max Pin 1 Indicator RF OUT Ground RF IN 0.50 nom 0.50 nom
N3
Lid ID 1.70 min 1.91 max 2.39 min 2.59 max 0.38 nom
Ground
0.98 min 1.02 max 0.37 min 0.63 max
All Dimensions in Millimeters
Notes: 1. Solder pads are coplanar to within 0.025 mm. 2. Lid will be centered relative to frontside metallization with a tolerance of 0.13 mm. 3. Mark to include two characters and dot to reference pin 1.
Rev A6 DS060124
7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
3 of 8
NBB-302
Typical Bias Configuration
Application notes related to biasing circuit, device footprint, and thermal considerations are available on request.
VCC RCC 1,2,3 In 4 C block 8 5,6,7,9
L choke
(optional)
Out C block VDEVICE VD = 3.9 V
Recommended Bias Resistor Values
Supply Voltage, VCC (V) Bias Resistor, RCC () 5 22 8 81 10 122 12 162 15 222 20 322
Application Notes
Die Attach The die attach process mechanically attaches the die to the circuit substrate. In addition, it electrically connects the ground to the trace on which the chip is mounted, and establishes the thermal path by which heat can leave the chip. Wire Bonding Electrical connections to the chip are made through wire bonds. Either wedge or ball bonding methods are acceptable practices for wire bonding. Assembly Procedure Epoxy or eutectic die attach are both acceptable attachment methods. Top and bottom metallization are gold. Conductive silver-filled epoxies are recommended. This procedure involves the use of epoxy to form a joint between the backside gold of the chip and the metallized area of the substrate. A 150C cure for 1 hour is necessary. Recommended epoxy is Ablebond 841LMI from Ablestik. Bonding Temperature (Wedge or Ball) It is recommended that the heater block temperature be set to 160C10C.
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7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A6 DS060124
NBB-302
Extended Frequency InGaP Amplifier Designer's Tool Kit NBB-X-K1
This tool kit was created to assist in the design-in of the RFMD NBB- and NLB-series InGap HBT gain block amplifiers. Each tool kit contains the following. * * * * 5 each NBB-300, NBB-310 and NBB-400 Ceramic Micro-X Amplifiers 5 each NLB-300, NLB-310 and NLB-400 Plastic Micro-X Amplifiers 2 Broadband Evaluation Boards and High Frequency SMA Connectors Broadband Bias Instructions and Specification Summary Index for ease of operation
Rev A6 DS060124
7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
5 of 8
NBB-302
Tape and Reel Dimensions
All Dimensions in Millimeters
T A B D S O
F
330 mm (13") REEL ITEMS Diameter FLANGE Thickness Space Between Flange Outer Diameter Spindle Hole Diameter Key Slit Width Key Slit Diameter Micro-X, MPGA SYMBOL SIZE (mm) B 330 +0.25/-4.0 T F O S A D 18.4 MAX 12.4 +2.0 SIZE (inches) 13.0 +0.079/-0.158 0.724 MAX 0.488 +0.08
HUB
102.0 REF 4.0 REF 13.0 +0.5/-0.2 0.512 +0.020/-0.008 1.5 MIN 20.2 MIN 0.059 MIN 0.795 MIN
PIN 1
User Direction of Feed
All dimensions in mm
4.0 2.00 0.05
See Note 1 See Note 6
0.30 0.05 R0.3 MAX.
1.5
+0.1 -0.0
A 1.75 5.50 0.05
See Note 6 12.00
1.5 MIN.
Bo
0.30
Ko SECTION A-A
Ao
8.0
A
R0.5 TYP
Ao = 3.6 MM Bo = 3.6 MM Ko = 1.7 MM
NOTES: 1. 10 sprocket hole pitch cumulative tolerance 0.2. 2. Camber not to exceed 1 mm in 100 mm. 3. Material: PS+C 4. Ao and Bo measured on a plane 0.3 mm above the bottom of the pocket. 5. Ko measured from a plane on the inside bottom of the pocket to the surface of the carrier. 6. Pocket position relative to sprocket hole measured as true position of pocket, not pocket hole.
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7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A6 DS060124
NBB-302
Device Voltage versus Amplifier Current
4.00 16.0
P1dB versus Frequency at +25C
14.0 3.95 12.0
Device Voltage, V D (V)
3.90
3.85
P1dB (dBm)
10.0
8.0
6.0
3.80 4.0 3.75 2.0
3.70 35.00 40.00 45.00 50.00 55.00 60.00
0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0
Amplifier Current, ICC (mA)
Frequency (GHz)
POUT/Gain versus PIN at 6 GHz
18.0 16.0 14.0 14.0 12.0 10.0
POUT/Gain versus PIN at 14 GHz
POUT (dBm), Gain (dB)
12.0 10.0 8.0 6.0 4.0 2.0 0.0 -12.0 -10.0 -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 Pout (dBm) Gain (dB)
POUT (dBm), Gain (dB)
8.0 6.0 4.0 2.0 0.0 -2.0 -4.0 -12.0 -10.0 -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 Pout (dBm) Gain (dB)
PIN (dBm)
PIN (dBm)
Third Order Intercept versus Frequency at +25C
30.0 28.0 26.0 24.0 22.0
Output IP3 (dBm)
20.0 18.0 16.0 14.0 12.0 10.0 8.0 6.0 4.0 2.0 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0
Frequency (GHz)
Rev A6 DS060124
7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
7 of 8
NBB-302
Note: The s-parameter gain results shown below include device performance as well as evaluation board and connector loss variations. The insertion losses of the evaluation board and connectors are as follows: 1GHz to 4GHz=-0.06dB
5GHz to 9GHz=-0.22dB 10GHz to 14GHz=-0.50dB 15GHz to 20GHz=-1.08dB
S11 versus Frequency at +25C
0.0 0.0
S12 versus Frequency at +25C
-5.0
-5.0
S11 (dB)
-10.0
S12 (dB)
0.0 5.0 10.0 15.0 20.0
-10.0
-15.0
-15.0
-20.0
-20.0 0.0 5.0 10.0 15.0 20.0
Frequency (GHz)
Frequency (GHz)
S21 versus Frequency at +25C
20.0 0.0
S22 versus Frequency at +25C
15.0
-5.0
S21 (dB)
10.0
S22 (dB)
0.0 5.0 10.0 15.0 20.0
-10.0
5.0
-15.0
0.0
-20.0 0.0 5.0 10.0 15.0 20.0
Frequency (GHz)
Frequency (GHz)
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7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A6 DS060124

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